Non-Volatile Organic Memory Elements Based on Carbon-Nanotube-Enabled Vertical Field-Effect Transistors

被引：33

作者：

Liu, Bo ^{[1
]}

McCarthy, Mitchell A. ^{[2
]}

Rinzler, Andrew G. ^{[1
]}

机构：

[1] Univ Florida, Dept Phys, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

ADVANCED FUNCTIONAL MATERIALS | 2010年 / 20卷 / 20期

基金：

美国国家科学基金会;

关键词：

POLYMERIC GATE ELECTRET; HYSTERESIS; BENZOCYCLOBUTENE; STABILITY; INSULATOR; SINGLE;

D O I：

10.1002/adfm.201001175

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High-performance non-volatile memory elements based on carbon-nanotube-enabled vertical field-effect transistors (CN-VFETs) are demonstrated. A thin crosslinking polymer layer, benzocyclobutene (BCB), on top of the gate dielectric acts as the charge storage layer. This results in a large, fully gate sweep programmable, hysteresis in the cyclic transfer curves exhibiting on/off ratios >4 orders of magnitude. The carbon nanotube random network source electrode facilitates charge injection into the charge storage layer, realizing the strong memory effect without sacrificing mobility in the vertical channel. Given their intrinsically simple fabrication and compact size CN-VFETs could provide a path to cost-effective, high-density organic memory devices.

引用

收藏

页码：3440 / 3445

页数：6

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