Band gap energy of pure and Al-doped ZnO thin films

被引：265

作者：

Shan, FK ^{[1
]}

Yu, YS ^{[1
]}

机构：

[1] Dongeui Univ, Elect Ceram Ctr, Pusan 614714, South Korea

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2004年 / 24卷 / 06期

关键词：

films; optical properties; pulsed laser deposition; ZnO;

D O I：

10.1016/S0955-2219(03)00490-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Pulsed laser deposition (PLD) technique is used to deposit pure and Al-doped ZnO thin films at different temperatures on glass substrates. From the transmission data from optical spectroscopy the band gap energy E-g of the films is derived. The dependences of E-g on the deposition temperatures of the pure and Al-doped ZnO films are different. The band gap energy of the pure ZnO increases and saturates with temperature. However, E-g of Al-doped ZnO shows an exponential decrease. Refractive indices of 1.9-2.1 in the VIS are determined by the spectroscopic ellipsometry (SE). Photoluminescence (PL) data reveal the strong near band emission by increasing the deposition temperature. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：1869 / 1872

页数：4

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