Structural change of TiN/Ti/SiO2 multilayers by N2 annealing

被引：7

作者：

Hamamura, H

Itoh, H

Shimogaki, Y

Aoyama, J

Yoshimi, T

Ueda, J

Komiyama, H

机构：

[1] Univ Tokyo, Dept Chem Syst Engn, Bunkyo Ku, Tokyo 113, Japan

[2] Semicond Technol Acad Res Ctr, R&D Dept, Minato Ku, Tokyo 105, Japan

来源：

THIN SOLID FILMS | 1998年 / 320卷 / 01期

关键词：

TiN/Ti/thick SiO2 multilayers; diffusion profile; amorphous layer; annealing; structural change; SIMS; TEM; XRD;

D O I：

10.1016/S0040-6090(97)01062-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the structural change of TiN/Ti/thick SiO2 multilayers as a function of annealing temperature by X-ray diffraction (XRD), transmission electron microscopy (TEM), and secondary ion mass spectroscopy (SIMS). XRD analysis and N concentration profiles determined by SIMS showed that the initial Ti(002) film changes to TiN (111) at annealing temperatures higher than 450 degrees C. TEM observations revealed that the interface between TiN and Ti become less distinct at annealing temperatures higher than 450 degrees C, and we found an amorphous layer at the interface between the Ti and the SiO2 layer. The O concentration profile determined by SIMS suggested that this layer was mainly TiOx. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：31 / 34

页数：4

共 5 条

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