Oriented growth of diamond on (0001) surface of hexagonal GaN

被引：20

作者：

Oba, M ^{[1
]}

Sugino, T ^{[1
]}

机构：

[1] Osaka Univ, Dept Elect Engn, Suita, Osaka 5650871, Japan

来源：

关键词：

diamond; oriented growth; gallium nitride; microwave plasma chemical vapor deposition;

D O I：

10.1016/S0925-9635(00)00448-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Oriented growth of diamond has been attempted on hexagonal GaN layers using conventional microwave plasma-assisted chemical vapor deposition (MP-CVD). GaN layers used as a substrate are grown on sapphire substrates by metal organic chemical vapor deposition (MO-CVD). Carburization, bias-enhanced nucleation and crystal growth processes are successively carried out. Oriented growth of diamond grains is demonstrated by the scanning electron microscopic image. It is suggested that an X-ray diffraction signal detected at 2 theta = 43.9 degrees is due to the (111) face of diamond. Moreover, a Raman signal which peaked at 1333 cm(-1) supports the growth of diamond. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1343 / 1346

页数：4

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