AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998
|
1998年
/
507卷
关键词:
D O I:
10.1557/PROC-507-547
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Particle contamination formed in reactive plasmas imposes an upper limit on the rate for particle-free deposition. Conversely, these plasmas could be exploited to produce nanometric clusters and particles for various applications. Infrared absorption spectroscopy has been applied to analyse the chemical composition of suspended particles. Mass spectrometry was also used to investigate cluster formation in these deposition plasmas. In pure silane plasmas, a random model reproduces the measured mass spectra, whereas the rich plasma chemistry in silane/oxygen mixtures shows a remarkable tendency to produce silasesquioxane anions.