Low pressure metalorganic vapor phase epitaxial growth of GaN/GaInN heterostructures

GaN layers with different nucleation techniques have been grown by metalorganic vapor phase epitaxy. At atmospheric pressure, no epitaxial layer growth occurred, whereas at low pressure the GaN quality could be drastically improved by an AIN nucleation layer. Excellent material properties have been found by photoluminescence, X-ray diffraction and Hall experiments. The incorporation of In in GaInN could be enhanced by a reduction of both growth temperature and reactor pressure. GaInN quantum wells grown at 700 degrees C show fairly strong photoluminescence peaks. (C) 1997 Elsevier Science Ltd.