A MICROSTRUCTURAL COMPARISON OF THE INITIAL GROWTH OF ALN AND GAN LAYERS ON BASAL-PLANE SAPPHIRE AND SIC SUBSTRATES BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：24

作者：

GEORGE, T ^{[1
]}

PIKE, WT ^{[1
]}

KHAN, MA ^{[1
]}

KUZNIA, JN ^{[1
]}

CHANGCHIEN, P ^{[1
]}

机构：

[1] APA OPT INC,BLAINE,MN 55434

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1995年 / 24卷 / 04期

关键词：

ALN; GAN; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM); INTERFACIAL BONDING; LOW PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); SAPPHIRE SUBSTRATES;

D O I：

10.1007/BF02659682

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The initial growth by low pressure metalorganic chemical vapor deposition and subsequent thermal annealing of AlN and GaN epitaxial layers on SiC and sapphire substrates is examined using high resolution transmission electron microscopy and atomic force microscopy. Growth under low pressure conditions on sapphire substrates is significantly different from that reported for conventional (atmospheric pressure) conditions. Smooth, single crystal AlN and GaN layers were deposited on sapphire in the initial low temperature (600 degrees C) growth step. Interfacial banding and not lattice mismatch was found to be the determining factor for obtaining good crystallinity for the epitaxial layers as indicated by the growth results on SiC substrates.

引用

页码：241 / 247

页数：7

共 7 条

[1] EFFECTS OF THE BUFFER LAYER IN METALORGANIC VAPOR-PHASE EPITAXY OF GAN ON SAPPHIRE SUBSTRATE [J].