High density capacitance structures in submicron CMOS for low power RF applications

被引：11

作者：

Sowlati, T ^{[1
]}

Vathulya, V ^{[1
]}

Leenaerts, D ^{[1
]}

机构：

[1] Philips Res, Briarcliff Manor, NY 10510 USA

来源：

ISLPED'01: PROCEEDINGS OF THE 2001 INTERNATIONAL SYMPOSIUM ON LOWPOWER ELECTRONICS AND DESIGN | 2001年

关键词：

CMOS; interconnect; RT passives; Bluetooth; HiPerLAN;

D O I：

10.1109/LPE.2001.945408

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper presents four novel interconnect based capacitors with 2 to 3 times the capacitance density of a conventional metal sandwich capacitor and with self-resonant frequencies above 20 GHz, suitable for low power RF applications. Unlike the conventional capacitor, the capacitance density of these structures increases with the scaling of the technology. The structures have been fabricated in both 0.25 mum and 0.18 mum CMOS technologies, measured and an equivalent circuit presented.

引用

页码：243 / 246

页数：4

共 9 条

[1]

JUSSILA J, 2001, P IEEE INT SOL STAT, P284

[2] 5-GHz CMOS radio transceiver front-end chipset [J].