Resistance switching for RRAM applications

被引：25

作者：

Chen, Frederick T. ^{[1
]}

Lee, HengYuan ^{[1
]}

Chen YuSheng ^{[1
,2
]}

Hsu YenYa ^{[1
]}

Zhang LiJie ^{[3
]}

Chen PangShiu ^{[4
]}

Chen WeiSu ^{[1
]}

Gu PeiYi ^{[1
]}

Liu WenHsing ^{[1
]}

Wang SuMin ^{[1
]}

Tsai ChenHan ^{[1
]}

Sheu, ShyhShyuan ^{[1
]}

Tsai MingJinn ^{[1
]}

Huang Ru ^{[3
]}

机构：

[1] Ind Technol Res Inst, Nanoelect Technol Div, Elect & Optoelect Res Labs, Hsinchu, Taiwan

[2] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu, Taiwan

[3] Peking Univ, Inst Microelect, Beijing 100084, Peoples R China

[4] Ming Shin Univ Sci & Technol, Dept Chem & Mat Engn, Hsinchu, Taiwan

来源：

SCIENCE CHINA-INFORMATION SCIENCES | 2011年 / 54卷 / 05期

关键词：

random access memory; storage; oxide; breakdown; oxygen; vacancies; LOW-POWER; THIN; BIPOLAR; LAYER;

D O I：

10.1007/s11432-011-4217-8

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Resistive random access memory (RRAM or ReRAM) is a non-volatile memory (NVM) technology that consumes minimal energy while offering sub-nanosecond switching. In addition, the data stability against high temperature and cycling wear is very robust, allowing new NVM applications in a variety of markets (automotive, embedded, storage, RAM). Based on sudden conduction through oxide insulators, the characteristics of RRAM technology have still yet to be fully described. In this paper, we present our current understanding of this very promising technology.

引用

页码：1073 / 1086

页数：14

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