Resistance switching of Cu/SiO2 memory cells studied under voltage and current-driven modes

被引：38

作者：

Bernard, Y. ^{[1
,2
]}

Gonon, P. ^{[1
]}

Jousseaume, V. ^{[2
]}

机构：

[1] Univ Grenoble 1, French Natl Res Ctr, CNRS, LTM, F-38054 Grenoble 9, France

[2] CEA LETI MINATEC, F-38054 Grenoble 9, France

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 19期

关键词：

copper; electrical conductivity transitions; electrical resistivity; metal-insulator boundaries; random-access storage; silicon compounds; switching; tunnelling; SOLID-ELECTROLYTE; SIO2; DIELECTRICS; BREAKDOWN; COPPER;

D O I：

10.1063/1.3428779

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Resistance switching in Cu/SiO2-based conductive-bridging random access memories is studied under voltage and current-driven modes. These two modes are used to study memory cycling and time-dependent switching. Voltage-current (V-I) cycles (logarithmic current ramp) are compared to I-V cycles (linear voltage ramp). The Off-On transition in V-I cycles is governed by device capacitance. The Off-On switching time (in the 10(-1)-10(3) s range) was studied under constant voltage and constant current stresses. The switching time varies as exp(V-0/V) and as 1/I. Switching kinetics is discussed considering a Fowler-Nordheim tunneling injection law and a field-induced nucleation theory.(C) 2010 American Institute of Physics. [doi:10.1063/1.3428779]

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