Resistance switching of copper doped MoOx films for nonvolatile memory applications

被引：115

作者：

Lee, Dongsoo ^{[1
]}

Seong, Dong-jun ^{[1
]}

Jo, Inhwa ^{[1
]}

Xiang, F. ^{[1
]}

Dong, R. ^{[1
]}

Oh, Seokjoon ^{[1
]}

Hwang, Hyunsang ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 12期

关键词：

OXIDE;

D O I：

10.1063/1.2715002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonvolatile and reversible resistance switching of copper doped MoOx film was studied. Hysteretic-type resistive switching was observed under dc. Reproducible resistance switching over 10(6) cycles was observed under alternative voltage pulses. Two resistance states can be maintained for 25 h at 85 degrees C. The authors proved that resistance switching might be strongly related with the rupture and generation of multifilaments confirmed by spreading resistance images of a conducting atomic force microscope as well as filamentary conduction by double logarithmic plots. Based on the x-ray photoelectron spectroscopy analysis, local conducting filaments could be formed by thermally diffused copper into MoOx film from the bottom electrode. (c) 2007 American Institute of Physics.

引用

页数：3

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