Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device

被引：116

作者：

Liu, Qi ^{[1
,2
]}

Dou, Chunmeng ^{[1
]}

Wang, Yan ^{[1
]}

Long, Shibing ^{[1
]}

Wang, Wei ^{[3
]}

Liu, Ming ^{[1
]}

Zhang, Manhong ^{[1
]}

Chen, Junning ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China

[2] Anhui Univ, Coll Elect & Technol, Hefei 230039, Peoples R China

[3] SUNY Albany, CNSE, Albany, NY 12203 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 02期

基金：

美国国家科学基金会;

关键词：

copper; electrical conductivity transitions; electrochemical electrodes; platinum; random-access storage; solid electrolytes; zirconium compounds; MEMORY APPLICATION;

D O I：

10.1063/1.3176977

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the direct electrical measurement of multiple resistance steps in the ZrO2-based solid electrolyte nonvolatile memory device using the refined dc I-V method with a very small voltage increasing rate. The results demonstrate that multiple conductive filaments are formed successively between the bottom and top metal electrodes through the insulating layer while increasing the bias voltage, which are consistent with the electrical field simulation results based on the solid electrolyte theory. The inverse relationship between resistance steps and the filament formation sequence are obtained, which helps understand the switching mechanism of the multiple conductive filaments.

引用

页数：3

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