Amorphous silicon electrostatic microresonators with high quality factors

被引:51
作者
Gaspar, J
Chu, V
Conde, JP
机构
[1] INESC MN, P-1000029 Lisbon, Portugal
[2] Univ Tecn Lisboa, Dept Mat Engn, Inst Super Tecn, P-1049001 Lisbon, Portugal
关键词
D O I
10.1063/1.1644319
中图分类号
O59 [应用物理学];
学科分类号
摘要
Phosphorus-doped amorphous-silicon thin-film micromachined mechanical bridge resonators are processed at low temperatures (less than or equal to110degreesC) on glass substrates. The microelectromechanical structures are electrostatically actuated, and the resulting deflection is monitored optically. Resonance frequencies in the megahertz range are observed with quality factors up to 5000 when measured in vacuum. The energy dissipation processes in amorphous-silicon thin-film microbridges are discussed. The dominant intrinsic dissipation mechanism is surface loss. (C) 2004 American Institute of Physics.
引用
收藏
页码:622 / 624
页数:3
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