MEASUREMENT OF THE MECHANICAL-PROPERTIES OF SILICON MICRORESONATORS

被引：81

作者：

ZHANG, LM

UTTAMCHANDANI, D

CULSHAW, B

机构：

[1] Department of Electronic and Electrical Engineering, University of Strathclyde, Glasgow, G1 1XW

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1991年 / 29卷 / 01期

关键词：

D O I：

10.1016/0924-4247(91)80034-M

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel technique for the simultaneous determination of the strain and Young's modulus of a silicon microresonator is reported. The lowest two symmetric vibration modes of a single resonator are excited and their frequencies measured. The measured frequencies are compared with a theoretical model. The strain is determined by substituting the ratio of the two frequencies into the model. The calculated strain is then substituted into a characteristic equation to yield Young's modulus. The measured value for Young's modulus is 1.31 x 10(11) Pa, which is close to that of pure silicon, 1.30 x 10(11) Pa.

引用

页码：79 / 84

页数：6

共 12 条

[1] A TECHNIQUE FOR THE DETERMINATION OF STRESS IN THIN-FILMS [J].