The effect of hydrogen- and oxygen-plasma treatments on dielectric properties of amorphous carbon nitride films

被引:17
作者
Aono, M [1 ]
Naruse, Y [1 ]
Nitta, S [1 ]
Katsuno, T [1 ]
机构
[1] Gifu Univ, Dept Elect Engn, Gifu 5011193, Japan
基金
日本学术振兴会;
关键词
nitride; amorphous; atomic hydrogen; oxygen;
D O I
10.1016/S0925-9635(00)00376-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Amorphous carbon nitride (a-CNx) films made by a reactive sputtering of a carbon target with nitrogen plasma shows high resistivity and high electrical breakdown field. Therefore, a-CNx is a good material as a dielectric material. In this paper, the effects of hydrogen-plasma and oxygen-plasma treatment to the dielectric properties of a-CNx films were studied, discussed and compared. A cyclic process of the deposition of a thin a-CNx film and hydrogen- and oxygen-plasma treatment, which is called the layer-by-layer process (LL), were used to make LLa-CNx and LLa-CNxOy films, respectively. Comparing the results of capacitance made of a-CNx, LLa-CNx, and LLa-CNxOy the most effective treatment to get smaller dielectric constant materials at present was to use hydrogen plasma treatment. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1147 / 1151
页数:5
相关论文
共 20 条
[1]  
Aono M, 2000, MATER RES SOC SYMP P, V593, P493
[2]   Internal stress of amorphous carbon nitride films [J].
Aono, M ;
Nitta, S ;
Katsuno, T ;
Iuchi, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03) :1773-1775
[3]   Amorphous carbon nitride films as a candidate for low dielectric constant materials [J].
Aono, M ;
Nitta, S ;
Iwasaki, T ;
Yokoi, H ;
Itoh, T ;
Nonomura, S .
LOW-DIELECTRIC CONSTANT MATERIALS V, 1999, 565 :291-296
[4]   Characterization of low dielectric constant amorphous carbon nitride films [J].
Aono, M ;
Nitta, S ;
Katsuno, T ;
Itoh, T ;
Nonomura, S .
APPLIED SURFACE SCIENCE, 2000, 159 :341-344
[5]   Determination of the structure of amorphous nitrogenated carbon films by combined Raman and x-ray photoemission spectroscopy [J].
Bhattacharyya, S ;
Hong, J ;
Turban, G .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (07) :3917-3919
[6]   PHYSICAL-PROPERTIES OF THIN CARBON NITRIDE FILMS DEPOSITED BY ELECTRON-CYCLOTRON-RESONANCE ASSISTED VAPOR-DEPOSITION [J].
BOUSETTA, A ;
LU, M ;
BENSAOULA, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1995, 13 (03) :1639-1643
[7]   ANALYTICAL ELECTRON-MICROSCOPY AND RAMAN-SPECTROSCOPY STUDIES OF CARBON NITRIDE THIN-FILMS [J].
CHEN, MY ;
LI, D ;
LIN, X ;
DRAVID, VP ;
CHUNG, YW ;
WONG, MS ;
SPROUL, WD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1993, 11 (03) :521-524
[8]   Determination of bonding in amorphous carbons by electron energy loss spectroscopy, Raman scattering and X-ray reflectivity [J].
Ferrari, AC ;
Kleinsorge, B ;
Adamopoulos, G ;
Robertson, J ;
Milne, WI ;
Stolojan, V ;
Brown, LM ;
LiBassi, A ;
Tanner, BK .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 :765-768
[9]   Structural stability for UV irradiation and dielectric properties of a-CNx films [J].
Itoh, T ;
Aono, M ;
Yoshida, S ;
Hattori, S ;
Katsuno, T ;
Nitta, S ;
Nonomura, S .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 :825-829
[10]   Structural and electronic properties of highly photoconductive amorphous carbon nitride [J].
Iwasaki, T ;
Aono, M ;
Nitta, S ;
Habuchi, H ;
Itoh, T ;
Nonomura, S .
DIAMOND AND RELATED MATERIALS, 1999, 8 (2-5) :440-445