Characterization of low dielectric constant amorphous carbon nitride films

被引：19

作者：

Aono, M ^{[1
]}

Nitta, S ^{[1
]}

Katsuno, T ^{[1
]}

Itoh, T ^{[1
]}

Nonomura, S ^{[1
]}

机构：

[1] Gifu Univ, Dept Elect Engn, Gifu 5011193, Japan

来源：

APPLIED SURFACE SCIENCE | 2000年 / 159卷

基金：

日本学术振兴会;

关键词：

low dielectric constant; amorphous; carbon-nitride film; reaction with metal; aluminum; Raman spectra;

D O I：

10.1016/S0169-4332(00)00057-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Amorphous carbon nitride (a-CNx) films have rather high resistivity and low dielectric constants that could be applied as low dielectric constant materials. Several properties of a-CNx films including interactions with metal electrodes are studied and discussed using data from the frequency dependence of capacitance, Raman and photoluminescence spectra. (C) 2000 Elsevier Science B.V. All rights reserved. PACS: 61.43.Dq and Er; 61.66Fn: 61.82MS: 68.35 - p: 73.40.Ns; 77.55. + f; 78.30. - j; 81.05.Zx; 81.15.Cd; 85.90. + h.

引用

页码：341 / 344

页数：4

共 12 条

[1]

AONO M, 1999, MRS C APR 5 9

[2] Refinement of PLAS samples by using AFM image and first observation of PLAS signals on amorphous carbon nitride a-CNx films [J].