Submicrometer Hall devices fabricated by focused electron-beam-induced deposition

被引:79
作者
Boero, G [1 ]
Utke, I [1 ]
Bret, T [1 ]
Quack, N [1 ]
Todorova, M [1 ]
Mouaziz, S [1 ]
Kejik, P [1 ]
Brugger, J [1 ]
Popovic, RS [1 ]
Hoffmann, P [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1063/1.1856134
中图分类号
O59 [应用物理学];
学科分类号
摘要
Hall devices having an active area of about (500 nm)(2) are fabricated by focused electron-beam-induced deposition. The deposited material consists of cobalt nanoparticles in a carbonaceous matrix. The realized devices have, at room temperature, a current sensitivity of about 1 V/AT, a resistance of a few kilo-ohms, and can be biased with a maximum current of about 1 mA. The room-temperature magnetic field resolution is about 10 muT/Hz(1/2) at frequencies above 1 kHz. (C) 2005 American Institute of Physics.
引用
收藏
页码:042503 / 1
页数:3
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