Integrated piezoresistive sensors for atomic force-guided scanning Hall probe microscopy

被引：27

作者：

Brook, AJ ^{[1
]}

Bending, SJ

Pinto, J

Oral, A

Ritchie, D

Beere, H

Henini, M

Springthorpe, A

机构：

[1] Univ Bath, Dept Phys, Bath BA2 7AY, Avon, England

[2] Bilkent Univ, Dept Phys, TR-06533 Bilkent, Turkey

[3] Univ Cambridge, Cavendish Lab, Cambridge CB3 OHE, England

[4] Univ Nottingham, Dept Phys, Nottingham NG7 2RD, England

[5] Nortel Networks Opt Components Inc, Ottawa, ON K2H 8E9, Canada

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 20期

关键词：

D O I：

10.1063/1.1576914

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the development of an advanced sensor for atomic force-guided scanning Hall probe microscopy whereby both a high mobility heterostructure Hall effect magnetic sensor and an n-Al0.4Ga0.6As piezoresistive displacement sensor have been integrated in a single III-V semiconductor cantilever. This allows simple operation in high-vacuum/variable-temperature environments and enables very high magnetic and topographic resolution to be achieved simultaneously. Scans of magnetic induction and topography of a number of samples are presented to illustrate the sensor performance at 300 and 77 K. (C) 2003 American Institute of Physics.

引用

页码：3538 / 3540

页数：3

共 8 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].