Self-assembled quantum dots on GaAs for optoelectronic applications

被引：6

作者：

Henini, M ^{[1
]}

机构：

[1] Univ Nottingham, Dept Phys, Nottingham NG7 2RD, England

来源：

MICROELECTRONICS JOURNAL | 2003年 / 34卷 / 5-8期

关键词：

GaAs; quantum dots; laser diodes;

D O I：

10.1016/S0026-2692(03)00020-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the past 20 years the semiconductor laser has become a key device in optical electronics because of its pure output spectrum and high quantum efficiency. As the capabilities of laser diodes have grown, so has the range of applications contemplated for them. The laser performance successes gained using quantum wells in optoelectronic devices can be extended by adopting quantum dot structures. This paper is intended to describe the laser applications of self-assembled quantum dots. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：333 / 336

页数：4

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