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A front-gate charge-pumping method for probing both interfaces in SOI devices

被引：20
作者：
Li, YJ
Ma, TP
机构：
[1] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA
[2] Yale Univ, Ctr Microelect Mat & Struct, New Haven, CT 06520 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 06期
关键词：
charge pumping; front and back coupling; interface traps; oxide charge; SOI transistors;
D O I：
10.1109/16.678565
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simple front-gate charge pumping technique has been developed, which enables the measurement of interface traps at both the front and the back interfaces of a fully depleted (FD) SOI/MOSFET. It is based on the strong coupling between the two interfaces, and its validity has been verified both experimentally and by computer simulation. Experiments have been performed on both SOI/NMOSFET's and SOI/PMOSFET's. This front-gate charge pumping technique is then utilized to study the hot-carrier induced degradation in SOI/NMOSFET's. It has been found that the back channel is physically damaged after front-channel hot-carrier injection. Front-gate Fowler-Nordheim (FN) injection has been found to cause damage at the front interface only.
引用
收藏
页码：1329 / 1335
页数：7
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