ADAPTATION OF THE CHARGE PUMPING TECHNIQUE TO GATED P-I-N-DIODES FABRICATED ON SILICON ON INSULATOR

The charge pumping technique is applied to MOS p-i-n diodes and used to characterize silicon on insulator films synthesized by oxygen implantation. The flat-band and threshold voltages, effective channel length, capture cross sections, and densities of traps at the front and back interfaces are extracted. The parameters of the charge pumping phenomenon are systematically studied and the ranges of validity are discussed. A parasitic component, due to an excess recombination of mobile carriers, occurs for very short transients during both the rise and fall of the gate pulse. It is demonstrated that the carrier reservoirs situated at the back interface play a significant role. Other specific features related to the dual-gate operation and interface coupling in silicon on insulator are presented. An improved model is developed for the interpretation of the interface state profile in the energy gap.