POSITIVE AND NEGATIVE CHARGE GENERATION BY HOT CARRIERS IN N-MOSFETS

被引：20

作者：

BORCHERT, B

HOFMANN, KR

DORDA, G

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 18期

关键词：

D O I：

10.1049/el:19830508

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：746 / 747

页数：2

相关论文

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