A GENERAL-MODEL FOR INTERFACE-TRAP CHARGE-PUMPING EFFECTS IN MOS DEVICES

被引：34

作者：

CILINGIROGLU, U ^{[1
]}

机构：

[1] ISTANBUL UNIV,FAC ELECT & ELECTR ENGN,DEPT ELECTR & TELECOMMUN,ISTANBUL,TURKEY

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 11期

关键词：

D O I：

10.1016/0038-1101(85)90194-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1127 / 1141

页数：15

相关论文

共 34 条

[1] MEASUREMENT OF INTERFACE STATE CHARACTERISTICS OF MOS-TRANSISTOR UTILIZING CHARGE-PUMPING TECHNIQUES
BACKENSTO, WV
VISWANATHAN, CR
[J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1981, 128 (02): : 44 - 52
[2] CHARGE PUMPING IN MOS DEVICES
BRUGLER, JS
JESPERS, PGA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (03) : 297 - +
[3] BURKE HM, 1972, ISSCC DIGEST TECH PA, P16
[4] A 2-DEVICE BISTABLE MEMORY CIRCUIT WITHOUT FEEDBACK LOOP
CILINGIROGLU, U
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1982, 17 (03) : 593 - 596
[5] CHARGE-PUMPING-LOOP CONCEPT FOR STATIC MOS-RAM CELLS
CILINGIROGLU, U
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (03) : 599 - 603
[6] Cilingiroglu U., 1981, ESSCIRC'81. Seventh European Solid-State Circuits Conference, P199
[7] Cilingiroglu U., 1980, Proceedings of the IEEE International Conference on Circuits and Computers ICCC 80, P31
[8] CILINGIROGLU U, 1978, ESSCIRC, P106
[9] 4096-BIT HIGH-SPEED EMITTER-COUPLED-LOGIC (ECL) COMPATIBLE RANDOM-ACCESS MEMORY
EBEL, MS
GIONIS, J
REGITZ, WM
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, 10 (05) : 262 - 267
[10] USE OF CHARGE PUMPING CURRENTS TO MEASURE SURFACE STATE DENSITIES IN MOS-TRANSISTORS
ELLIOT, ABM
[J]. SOLID-STATE ELECTRONICS, 1976, 19 (03) : 241 - 247

← 1 2 3 4 →