SIMULATION OF INTERFACE COUPLING EFFECTS IN ULTRA-THIN SILICON ON INSULATOR MOSFETS

被引：1

作者：

HASSEINBEY, A ^{[1
]}

CRISTOLOVEANU, S ^{[1
]}

机构：

[1] ENSERG,PHYS COMPOSANTS & SEMICOND LAB,CNRS,F-38016 GRENOBLE,FRANCE

来源：

COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING | 1992年 / 11卷 / 04期

关键词：

D O I：

10.1108/eb010111

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

[No abstract available]

引用

页码：513 / 517

页数：5

共 8 条

[1] DOUBLE-GATE SILICON-ON-INSULATOR TRANSISTOR WITH VOLUME INVERSION - A NEW DEVICE WITH GREATLY ENHANCED PERFORMANCE [J].

BALESTRA, F ;

CRISTOLOVEANU, S ;

BENACHIR, M ;

BRINI, J ;

ELEWA, T .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (09) :410-412

[2] SUBTHRESHOLD SLOPE OF THIN-FILM SOI MOSFETS [J].

COLINGE, JP .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) :244-246

[3] REDUCTION OF FLOATING SUBSTRATE EFFECT IN THIN-FILM SOI MOSFETS [J].

COLINGE, JP .

ELECTRONICS LETTERS, 1986, 22 (04) :187-188

[4] A REVIEW OF THE ELECTRICAL-PROPERTIES OF SIMOX SUBSTRATES AND THEIR IMPACT ON DEVICE PERFORMANCE [J].

CRISTOLOVEANU, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (10) :3131-3139

[5]

HASSEINBEY A, 1991, MODELLING CHARACTERI, P251

[6] PROPERTIES OF ULTRA-THIN WAFER-BONDED SILICON-ON-INSULATOR MOSFETS [J].

MAZHARI, B ;

CRISTOLOVEANU, S ;

IOANNOU, DE ;

CAVIGLIA, AL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (06) :1289-1295

[7] INFLUENCE OF SERIES RESISTANCES AND INTERFACE COUPLING ON THE TRANSCONDUCTANCE OF FULLY-DEPLETED SILICON-ON-INSULATOR MOSFETS [J].

OUISSE, T ;

CRISTOLOVEANU, S ;

BOREL, G .

SOLID-STATE ELECTRONICS, 1992, 35 (02) :141-149

[8] INCREASED DRAIN SATURATION CURRENT IN ULTRA-THIN SILICON-ON-INSULATOR (SOI) MOS-TRANSISTORS [J].

STURM, JC ;

TOKUNAGA, K ;

COLINGE, JP .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) :460-463

← 1 →