GaN-based light-emitting diodes with Ni/AuBe transparent conductive layer

被引：46

作者：

Chen, LC

Hsu, CY

Lan, WH

Teng, SY

机构：

[1] Natl Taiwan Inst Technol, Dept Electroopt Engn, Taipei 106, Taiwan

[2] Natl Chiao Tung Univ, Dept Mat & Engn, Hsinchu, Taiwan

[3] Natl Univ Kaohsiung, Dept Elect Engn, Kaohsiung, Taiwan

[4] Formosa Epitaxy Inc, Taoyuan, Taiwan

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 10期

关键词：

GaN; light-emitting diodes; Ni/AuBe;

D O I：

10.1016/S0038-1101(03)00129-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ni/AuBe as p-type ohmic contact to p-GaN in the heat treatment process are reported. By selection of an optimum condition, the best construction of Ni/AuBe bi-layers is 5 nm/5 nm thick. The light-transmission is about 75% for 470 nm blue light and the lowest specific contact resistance obtained is 2 x 10(-3) Omega cm(2) examined by transmission line model after heat treatment process at 500 degreesC alloying temperature during 10 min in nitrogen ambient. The Be atom may plays an important role in the formation of good ohmic contacts. On the other hand, Ni/AuBe bi-layers are also applied to GaN-based light-emitting diodes (LEDs) as p-type ohmic contact electrode. The typical I-V characteristics of the GaN-based LEDs with 5 nm/5 nm-thick Ni/AuBe TCL exhibit a forward-bias voltage of 3.41 V at injection Current of 20 mA. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：1843 / 1846

页数：4

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