Mg concentration dependence of optical properties in GaN:Mg

被引：7

作者：

Oh, E ^{[1
]}

Park, M ^{[1
]}

Kang, S ^{[1
]}

Cho, H ^{[1
]}

Kim, B ^{[1
]}

Yoo, M ^{[1
]}

Song, H ^{[1
]}

Kim, T ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Mat Sect, Suwon 440600, South Korea

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

D O I：

10.1016/S0022-0248(98)00308-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Photoluminescence spectra of MBE-grown GaN:Mg samples have been studied as a function of temperature, excitation density, and ME concentration. For highly doped samples a red shift of the donor-acceptor pair transition line was observed with increasing Mg concentration. With increasing excitation density, the emission was found to shift to higher energy. This is explained by the formation of mini-bands originating from the discrete acceptor levels. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：537 / 540

页数：4

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