Direct bonding between quaternary compound semiconductor and garnet crystals for integrated optical isolator

被引:8
作者
Yokoi, H
Mizumoto, T
Shimizu, M
Futakuchi, N
Kaida, N
Nakano, Y
机构
[1] Tokyo Inst Technol, Fac Engn, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
[2] Univ Tokyo, Sch Engn, Dept Elect Engn, Bunkyo Ku, Tokyo 1138654, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 1A期
关键词
optical isolator; wafer direct bonding; semiconductor; magnetic garnets; SEM;
D O I
10.1143/JJAP.38.195
中图分类号
O59 [应用物理学];
学科分类号
摘要
An integrated optical isolator employing a nonreciprocal phase shift is very attractive because it does not need phase matching. We have investigated a novel configuration of the integrated optical isolator, employing the nonreciprocal phase shift, in which the magnetooptic waveguide has a magnetic garnet/GaInAsP/InP structure. The wafer direct bonding technique is necessary to realize this structure. The direct bonding between quaternary III-V compound semiconductors and garnet crystals was experimentally Studied. The bonding was achieved by chemical treatment and subsequent heat treatment at temperatures ranging from 110 to 330 degrees C. Cross-sectional scanning electron microscope (SEM) images indicated that there were no gaps between the two wafers in contact.
引用
收藏
页码:195 / 197
页数:3
相关论文
共 11 条
[1]  
ABE T, 1990, SOLID STATE TECH NOV, P39
[2]   NEW DESIGN FOR AN INTEGRATED OPTICAL ISOLATOR [J].
AURACHER, F ;
WITTE, HH .
OPTICS COMMUNICATIONS, 1975, 13 (04) :435-438
[3]   DIVERSITY AND FEASIBILITY OF DIRECT BONDING - A SURVEY OF A DEDICATED OPTICAL-TECHNOLOGY [J].
HAISMA, J ;
SPIERINGS, BACM ;
BIERMANN, UKP ;
VANGORKUM, AA .
APPLIED OPTICS, 1994, 33 (07) :1154-1169
[4]   SEMICONDUCTOR-LASERS ON SI SUBSTRATES USING THE TECHNOLOGY OF BONDING BY ATOMIC REARRANGEMENT [J].
LO, YH ;
BHAT, R ;
HWANG, DM ;
CHUA, C ;
LIN, CH .
APPLIED PHYSICS LETTERS, 1993, 62 (10) :1038-1040
[5]   INPLANE MAGNETIZED RARE-EARTH IRON-GARNET FOR A WAVE-GUIDE OPTICAL ISOLATOR EMPLOYING NONRECIPROCAL PHASE-SHIFT [J].
MIZUMOTO, T ;
MASHIMO, S ;
IDA, T ;
NAITO, Y .
IEEE TRANSACTIONS ON MAGNETICS, 1993, 29 (06) :3417-3419
[6]   DEMONSTRATION OF DIRECT BONDING BETWEEN INP AND GADOLINIUM GALLIUM GARNET (GD3GA5O12) SUBSTRATES [J].
TOTOKI, M ;
MIZUMOTO, T ;
MARU, K ;
NAITO, Y .
ELECTRONICS LETTERS, 1994, 30 (18) :1534-1536
[7]   ELECTRICAL CHARACTERISTICS OF DIRECTLY-BONDED GAAS AND INP [J].
WADA, H ;
OGAWA, Y ;
KAMIJOH, T .
APPLIED PHYSICS LETTERS, 1993, 62 (07) :738-740
[8]   Magnetooptic waveguide with SiO2 cladding layer integrated on InP substrate by wafer direct bonding [J].
Yokoi, H ;
Mizumoto, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (12A) :7230-7232
[9]   DIRECT BONDING BETWEEN INP AND RARE-EARTH IRON-GARNET GROWN ON GD3GA5O12 SUBSTRATE BY LIQUID-PHASE EPITAXY [J].
YOKOI, H ;
MIZUMOTO, T ;
MARU, K ;
NAITO, Y .
ELECTRONICS LETTERS, 1995, 31 (18) :1612-1613
[10]   Direct bonding between InP substrate and magnetooptic waveguides [J].
Yokoi, H ;
Mizumoto, T ;
Maru, K ;
Fuke, N ;
Naito, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (07) :4138-4140