Magnetooptic waveguide with SiO2 cladding layer integrated on InP substrate by wafer direct bonding

被引：3

作者：

Yokoi, H ^{[1
]}

Mizumoto, T ^{[1
]}

机构：

[1] Tokyo Inst Technol, Fac Engn, Dept Phys Elect, Meguro Ku, Tokyo 152, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 12A期

关键词：

wafer direct bonding; magnetooptic waveguide; InP; SiO2 optical isolator;

D O I：

10.1143/JJAP.36.7230

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetooptic waveguides with a SiO2 cladding layer mere fabricated on an InP substrate by the wafer direct bonding technique for the purpose of integrating a laser diode and an optical isolator. First, direct bonding between InP and sputter-deposited SiO2 on a Gd3Ga5O12 substrate was investigated. Bonding tvas achieved by surface treatment of both wafers and subsequent heat treatment in H-2 ambient. By applying heat treatment in H-2 ambient at temperatures ranging between 110 and 220 degrees C, the magnetooptic waveguides were bonded to the InP substrate without deterioration of their optical properties.

引用

页码：7230 / 7232

页数：3

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