Room-temperature CW operation of InGaAsP lasers on Si fabricated by wafer bonding

被引：55

作者：

Wada, H

Kamijoh, T

机构：

[1] Optoelectronics Oki Laboratory, Real World Computing Partnership, OKI Electric Industry Co. Ltd., Hachioji, Tokyo 193

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 02期

关键词：

D O I：

10.1109/68.484231

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

1.3-mu m InGaAsP-InP lasers have been successfully fabricated on Si substrates by wafer bonding with heat treatment at 400 degrees C. A pressure of 4 kg/cm(2) has been applied on the wafers before the heat treatment and this pressure application has enabled us to achieve bonding strength required for the device fabrication even when the bonding temperature is as low as 400 degrees C. Room-temperature continuous-wave operation with threshold current of 49 mA has been achieved for 7-mu m-wide mesa lasers.

引用

页码：173 / 175

页数：3

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