DEMONSTRATION OF DIRECT BONDING BETWEEN INP AND GADOLINIUM GALLIUM GARNET (GD3GA5O12) SUBSTRATES

被引：7

作者：

TOTOKI, M

MIZUMOTO, T

MARU, K

NAITO, Y

机构：

[1] Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 18期

关键词：

INDIUM PHOSPHIDE; GARNETS;

D O I：

10.1049/el:19941031

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors demonstrate the direct bonding of InP/Gd3Ga5O12 (GGG) and InP/GaInSb on GGG without glue. After chemical treatment, heat treatment was applied in an H, atmosphere without a weight. This technique makes feasible the integration of semiconductor and magneto-optic devices.

引用

页码：1534 / 1536

页数：3

共 7 条

[1]

AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9

[2] SILICON-ON-INSULATOR WAFER BONDING-WAFER THINNING TECHNOLOGICAL EVALUATIONS [J].

HAISMA, J ;

SPIERINGS, GACM ;

BIERMANN, UKP ;

PALS, JA .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (08) :1426-1443

[3] WAFER FUSION - A NOVEL TECHNIQUE FOR OPTOELECTRONIC DEVICE FABRICATION AND MONOLITHIC INTEGRATION [J].

LIAU, ZL ;

MULL, DE .

APPLIED PHYSICS LETTERS, 1990, 56 (08) :737-739

[4] SEMICONDUCTOR-LASERS ON SI SUBSTRATES USING THE TECHNOLOGY OF BONDING BY ATOMIC REARRANGEMENT [J].

LO, YH ;

BHAT, R ;

HWANG, DM ;

CHUA, C ;

LIN, CH .

APPLIED PHYSICS LETTERS, 1993, 62 (10) :1038-1040

[5] 1ST CW OPERATION OF A GA0.25IN0.75AS0.5P0.5-INP LASER ON A SILICON SUBSTRATE [J].

RAZEGHI, M ;

DEFOUR, M ;

BLONDEAU, R ;

OMNES, F ;

MAUREL, P ;

ACHER, O ;

BRILLOUET, F ;

CFAN, JC ;

SALERNO, J .

APPLIED PHYSICS LETTERS, 1988, 53 (24) :2389-2390

[6] GROWTH OF GAINSB ON GD3GA5O12 SUBSTRATE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

TOTOKI, M ;

MIZUMOTO, T ;

FUJISAWA, T ;

NAITO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (12A) :5637-5641

[7] ELECTRICAL CHARACTERISTICS OF DIRECTLY-BONDED GAAS AND INP [J].

WADA, H ;

OGAWA, Y ;

KAMIJOH, T .

APPLIED PHYSICS LETTERS, 1993, 62 (07) :738-740

← 1 →