GROWTH OF GAINSB ON GD3GA5O12 SUBSTRATE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：4

作者：

TOTOKI, M

MIZUMOTO, T

FUJISAWA, T

NAITO, Y

机构：

[1] Tokyo Institute of Technology Meguro, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 12A期

关键词：

MOCVD; X-RAY DIFFRACTION; SEM; SEMICONDUCTOR; GARNET; LATTICE CONSTANT; GROWTH RATE;

D O I：

10.1143/JJAP.32.5637

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-organic chemical vapor deposition of GaInSb on a Gd3Ga5O12(GGG) substrate is reported. (111)-Oriented GaInSb thin layers are grown on both (111) and (100)GGG substrates. The lattice constant of the grown layer is dependent on the growth temperature and the flow rate as a function of the mixed ratio of the gas-phase group III components, but is independent of V/III ratio and total carrier gas flow rate. The surface morphology has been improved by lowering growth temperature, reducing total flow rate through bubbling cylinders and increasing gas-phase group III components. We obtained a smooth surface of GaInSb at a growth temperature of 450-degrees-C with a reduced total flow rate and a V/III ratio of between 0.5 and 0.7.

引用

收藏

页码：5637 / 5641

页数：5

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