Space-charge limited current in regioregular poly-3-hexyl-thiophene

被引:66
作者
Nikitenko, VR
Heil, H [1 ]
von Seggern, H
机构
[1] Tech Univ Darmstadt, Inst Mat & Geo Sci, Elect Mat Dept, D-64287 Darmstadt, Germany
[2] State Univ, Moscow Engn Phys Inst, Moscow 115409, Russia
关键词
D O I
10.1063/1.1595707
中图分类号
O59 [应用物理学];
学科分类号
摘要
Temperature dependent current-voltage characteristics of an organic diode based on a thin film of regioregular poly-3-hexyl-thiophene (P3HT) are compared with results of a theoretical model assuming space-charge limited currents with a density of states (DOS), nonmonotonous in energy. This DOS was deduced from experiments utilizing the method of thermally stimulated currents. Both, experiments and theory result in an almost power-law dependence of jproportional toV(m), where the exponent m increases with decreasing temperature assuming a value of m=2 at room temperature. This effect can be accounted for by filling of deep traps at lower temperatures. Transport of charge carriers in P3HT seems to be limited by hopping in disordered regions rather than by the transport via extended states within crystalline grains. (C) 2003 American Institute of Physics.
引用
收藏
页码:2480 / 2485
页数:6
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