Structural characterization of CVD diamond films using the ESR method

被引：17

作者：

Show, Y

Iwase, M

Izumi, T

机构：

[1] Faculty of Engineering, Department of Electronics, Tokai University, Hiratsuka, Kanagawa, 1117, Kitakaname

来源：

THIN SOLID FILMS | 1996年 / 274卷 / 1-2期

关键词：

chemical vapour deposition; diamond; electron spin resonance; surface conductivity;

D O I：

10.1016/0040-6090(95)07097-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The early deposition stages of diamond films have been studied in detail as a function of growth time, using electron spin resonance methods. The defect center in the non-diamond phase carbon region (g = 2.003, Delta H-pp = 8-14 Oe) was observed from a sample deposited for 10 min. The defect center in the diamond layer (g = 2.003, Delta H-pp = 3-5 Oe) was observed together with the defect center in non-diamond phase carbon after 20 min of growth time, and the intensity of the defect center in the diamond layer increased gradually with prolonged deposition rime. Moreover, the relationship between defect structures and electrical resistance of the diamond film was discussed.

引用

收藏

页码：50 / 54

页数：5

相关论文

共 23 条

[1] ROLE OF HYDROGEN AND OXYGEN IN DIAMOND SYNTHESIS USING CARBON-DIOXIDE METHANE-GAS MIXTURES [J].

CHEN, CF ;

HONG, TM ;

CHEN, SH .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (07) :4483-4489

[2]

DEGUCHI M, 1993, P 2 INT C APPL DIAM, P793

[3]

Field J.E., 1979, PROPERTIES DIAMOND

[4] HIGH-TEMPERATURE POINT-CONTACT TRANSISTORS AND SCHOTTKY DIODES FORMED ON SYNTHETIC BORON-DOPED DIAMOND [J].

GEIS, MW ;

RATHMAN, DD ;

EHRLICH, DJ ;

MURPHY, RA ;

LINDLEY, WT .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) :341-343

[5] THE EFFECT OF SURFACE-TREATMENT ON THE ELECTRICAL-PROPERTIES OF METAL CONTACTS TO BORON-DOPED HOMOEPITAXIAL DIAMOND FILM [J].

GROT, SA ;

GILDENBLAT, GS ;

HATFIELD, CW ;

WRONSKI, CR ;

BADZIAN, AR ;

BADZIAN, T ;

MESSIER, R .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (02) :100-102

[6]

GUOLIANG Z, 1986, RADIAT EFF, V97, P273

[7] SYNTHESIS OF DIAMONDS BY USE OF MICROWAVE PLASMA CHEMICAL-VAPOR DEPOSITION - MORPHOLOGY AND GROWTH OF DIAMOND FILMS [J].

KOBASHI, K ;

NISHIMURA, K ;

KAWATE, Y ;

HORIUCHI, T .

PHYSICAL REVIEW B, 1988, 38 (06) :4067-4084

[8] EFFECT OF ANNEALING IN AIR ON ELECTRICAL RESISTANCES OF B-DOPED POLYCRYSTALLINE DIAMOND FILMS [J].

MIYATA, K ;

DREIFUS, DL .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (08) :4526-4533

[9] CHARACTERIZATION OF SURFACE CONDUCTIVE DIAMOND LAYER GROWN BY MICROWAVE PLASMA CHEMICAL-VAPOR-DEPOSITION [J].

MORI, Y ;

SHOW, Y ;

DEGUCHI, M ;

YAGI, H ;

YAGYU, H ;

EIMORI, N ;

OKADA, T ;

HATTA, A ;

NISHIMURA, K ;

KITABATAKE, M ;

ITO, T ;

HIRAO, T ;

IZUMI, T ;

SASAKI, T ;

HIRAKI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (7B) :L987-L989

[10]

NAKAHATA H, 1991, 2ND P INT S DIAM MAT, P487