EFFECT OF ANNEALING IN AIR ON ELECTRICAL RESISTANCES OF B-DOPED POLYCRYSTALLINE DIAMOND FILMS

被引：18

作者：

MIYATA, K ^{[1
]}

DREIFUS, DL ^{[1
]}

机构：

[1] KOBE STEEL USA INC,CTR ELECTR MAT,RES TRIANGLE PK,NC 27709

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 08期

关键词：

POLYCRYSTALLINE DIAMOND FILMS; BORON DOPING; ANNEALING IN AIR; ELECTRICAL RESISTANCE; SURFACE CONDUCTIVE LAYER;

D O I：

10.1143/JJAP.33.4526

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependent electrical behavior of as-deposited B-doped polycrystalline diamond films was investigated. Diamond films with various atomic B concentrations were deposited using a microwave plasma. chemical vapor deposition technique. The atomic B concentrations mere determined using secondary ion mass spectroscopy. Resistances mere measured between 25 and 525 degrees C in air. Similar electrical behavior was observed for films with atomic B concentrations less than 3 x 10(17) cm(-3) in which the resistance increased over 6 orders of magnitude after heating to 525 degrees C. The variation in resistance between the heating and cooling cycles decreased with increasing B concentration. Little or no variation in the resistance was observed for films with atomic B concentrations higher than 4 x 10(18) cm(-3). The variable temperature dependent behavior can be explained by a surface conduction mechanism.

引用

页码：4526 / 4533

页数：8

共 35 条

[1] CURRENT-VOLTAGE CHARACTERISTICS OF THIN-FILM AND BULK DIAMOND TREATED IN HYDROGEN PLASMA [J].

ALBIN, S ;

WATKINS, L .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (04) :159-161

[2] VAPOR-PHASE OXIDATION OF DIAMOND SURFACES IN O2 STUDIED BY DIFFUSE-REFLECTANCE FOURIER-TRANSFORM INFRARED AND TEMPERATURE-PROGRAMMED DESORPTION SPECTROSCOPY [J].

ANDO, T ;

YAMAMOTO, K ;

ISHII, M ;

KAMO, M ;

SATO, Y .

JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS, 1993, 89 (19) :3635-3640

[3]

FIELD JE, 1979, PROPERTIES DIAMOND, P79

[4] CHARACTERIZATION OF CONDUCTING DIAMOND FILMS [J].

FUJIMORI, N ;

IMAI, T ;

DOI, A .

VACUUM, 1986, 36 (1-3) :99-102

[5] DIAMOND COLD-CATHODE [J].

GEIS, MW ;

EFREMOW, NN ;

WOODHOUSE, JD ;

MCALEESE, MD ;

MARCHYWKA, M ;

SOCKER, DG ;

HOCHEDEZ, JF .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (08) :456-459

[6] HIGH-TEMPERATURE POINT-CONTACT TRANSISTORS AND SCHOTTKY DIODES FORMED ON SYNTHETIC BORON-DOPED DIAMOND [J].

GEIS, MW ;

RATHMAN, DD ;

EHRLICH, DJ ;

MURPHY, RA ;

LINDLEY, WT .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) :341-343

[7] ELECTRICAL CHARACTERISTICS OF SCHOTTKY DIODES FABRICATED USING PLASMA ASSISTED CHEMICAL VAPOR-DEPOSITED DIAMOND FILMS [J].

GILDENBLAT, GS ;

GROT, SA ;

WRONSKI, CR ;

BADZIAN, AR ;

BADZIAN, T ;

MESSIER, R .

APPLIED PHYSICS LETTERS, 1988, 53 (07) :586-588

[8] HIGH-TEMPERATURE THIN-FILM DIAMOND FIELD-EFFECT TRANSISTOR FABRICATED USING A SELECTIVE GROWTH METHOD [J].

GILDENBLAT, GS ;

GROT, SA ;

HATFIELD, CW ;

BADZIAN, AR .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (02) :37-39

[9] ELECTRICAL-PROPERTIES OF DOPED AND UNDOPED CHEMICALLY VAPOR-DEPOSITED DIAMOND FILMS [J].

HARPER, RE ;

JOHNSTON, C ;

BLAMIRES, NG ;

CHALKER, PR ;

BUCKLEYGOLDER, IM .

SURFACE & COATINGS TECHNOLOGY, 1991, 47 (1-3) :344-355

[10] THE BARRIER HEIGHT OF SCHOTTKY DIODES WITH A CHEMICAL-VAPOR-DEPOSITED DIAMOND BASE [J].

HICKS, MC ;

WRONSKI, CR ;

GROT, SA ;

GILDENBLAT, GS ;

BADZIAN, AR ;

BADZIAN, T ;

MESSIER, R .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (05) :2139-2141

← 1 2 3 4 →