Synthesis of conductive LaNiO3 thin films by chemical solution deposition

Metallic conductive LaNiO3 thin films have been prepared by the chemical solution deposition method. A homogeneous and stable LaNiO3 precursor solution was prepared by controlling the reaction of metal organics. Dehydration of the starting material Ni(acac)(2) (.) 2H(2)O was a key factor in preparing a proper LaNiO3 precursor solution, because the hydrolysis of La(OPr)(3) has to be suppressed through the removal of hydrated water. The precursor films were prepared from the solution by dip-coating and spin-coating. 110-oriented LaNiO3 thin films were synthesized from the LaNiO3 precursor solution on fused silica substrates at 700 degreesC. LaNiO3 film prepared by spin-coating had a better surface smoothness than that prepared by dip-coating. The resistivities of 100-nm-thick LaNiO3 films prepared by dip-coating and spin-coating were 3.8 x 10(-5) Omega m and 2.9 x 10(-5) Omega in, respectively, at room temperature.