Material requirements and design considerations for Si/SiGe heterojunction CMOS

被引：6

作者：

Badcock, S ^{[1
]}

O'Neill, A ^{[1
]}

机构：

[1] Univ Newcastle Upon Tyne, Dept Elect & Elect Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2000年 / 28卷 / 5-6期

关键词：

SiGe; MOSFET; HMOSFET; CMOS; design; TCAD; circuits; applications;

D O I：

10.1006/spmi.2000.0935

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Five vertical architecture options fur SiGe/Si heterojunction CMOS devices are compared using technology computer-aided design. The benefit of using SiGe over conventional MOSFETs is set to increase for future technology generations. We investigate the impact of material degradation, to determine the minimum requirements needed for HMOS to offer real advantages over conventional CMOS. (C) 2000 Academic Press.

引用

页码：363 / 368

页数：6

共 8 条

[1] Performance estimation of Si/SiGe hetero-CMOS circuits [J].