Trion formation in narrow GaAs quantum well structures

被引：21

作者：

Teran, FJ ^{[1
]}

Eaves, L

Mansouri, L

Buhmann, H

Maude, DK

Potemski, M

Henini, M

Hill, G

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] CNRS, Grenoble High Magnet Field Lab, F-38042 Grenoble, France

[3] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

[4] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

PHYSICAL REVIEW B | 2005年 / 71卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.71.161309

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study the optical and electrical properties of n-i-n GaAs/AlAs double-barrier resonant tunneling diodes. Under illumination, new resonances appear in the current-voltage curves due to tunneling of photoexcited holes. By tuning the bias and the intensity of illumination, we can control independently the number of electrons and holes tunneling into the quantum well. This allows us to create charge conditions in the well that favor the formation of either positively charged, neutral, or negatively charged excitons. Our measured value of the binding energy of the second electron in the negative trion is significantly larger than that of the second hole in the positive trion.

引用

页数：4

共 22 条

[11]

Insepov Z.A., 1975, SOV PHYS JETP, V42, P674

[12] Dynamical equilibrium between excitons and trions in CdTe quantum wells in high magnetic fields [J].

Jeukens, CRLPN ;

Christianen, PCM ;

Maan, JC ;

Yakovlev, DR ;

Ossau, W ;

Kochereshko, VP ;

Wojtowicz, T ;

Karczewski, G ;

Kossut, J .

PHYSICAL REVIEW B, 2002, 66 (23) :1-11

[13] OBSERVATION OF NEGATIVELY CHARGED EXCITONS X- IN SEMICONDUCTOR QUANTUM-WELLS [J].

KHENG, K ;

COX, RT ;

DAUBIGNE, YM ;

BASSANI, F ;

SAMINADAYAR, K ;

TATARENKO, S .

PHYSICAL REVIEW LETTERS, 1993, 71 (11) :1752-1755

[14] MOBILE AND IMMOBILE EFFECTIVE-MASS-PARTICLE COMPLEXES IN NONMETALLIC SOLIDS [J].

LAMPERT, MA .

PHYSICAL REVIEW LETTERS, 1958, 1 (12) :450-453

[15] RESONANT MAGNETOTUNNELING OF ELECTRONS AND HOLES IN A P-I-N-DIODE DEVICE INCORPORATING A DOUBLE BARRIER STRUCTURE [J].

MARTIN, PM ;

HAYDEN, RK ;

WHITE, CRH ;

HENINI, M ;

EAVES, L ;

MAUDE, DK ;

PORTAL, JC ;

HILL, G ;

PATE, MA .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (3B) :B456-B459

[16] Enhancement of the binding energy of charged excitons in disordered quantum wires [J].

Otterburg, T ;

Oberli, DY ;

Dupertuis, MA ;

Moret, N ;

Pelucchi, E ;

Dwir, B ;

Leifer, K ;

Kapon, E .

PHYSICAL REVIEW B, 2005, 71 (03)

[17] Optical spectroscopy of single quantum dots at tunable positive, neutral, and negative charge states [J].

Regelman, DV ;

Dekel, E ;

Gershoni, D ;

Ehrenfreund, E ;

Williamson, AJ ;

Shumway, J ;

Zunger, A ;

Schoenfeld, WV ;

Petroff, PM .

PHYSICAL REVIEW B, 2001, 64 (16) :1653011-1653017

[18] Excitons and charged excitons in semiconductor quantum wells [J].

Riva, C ;

Peeters, FM ;

Varga, K .

PHYSICAL REVIEW B, 2000, 61 (20) :13873-13881

[19] MAGNETOOPTICAL SPECTROSCOPY OF POSITIVELY CHARGED EXCITONS IN GAAS QUANTUM-WELLS [J].

SHIELDS, AJ ;

OSBORNE, JL ;

SIMMONS, MY ;

PEPPER, M ;

RITCHIE, DA .

PHYSICAL REVIEW B, 1995, 52 (08) :R5523-R5526

[20] Theoretical comparative study of negatively and positively charged excitons in GaAs/Ga1-xAlxAs semiconductor quantum wells [J].

Stébé, B ;

Moradi, A ;

Dujardin, F .

PHYSICAL REVIEW B, 2000, 61 (11) :7231-7232

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