Simulation of PNP InAlAs/InGaAs heterojunction bipolar transistors

被引：7

作者：

Shi, S ^{[1
]}

Roenker, KP ^{[1
]}

Kumar, T ^{[1
]}

Cahay, MM ^{[1
]}

Stanchina, WE ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 09期

关键词：

D O I：

10.1109/16.535334

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of single heterojunction InAlAs/InGaAs PNP heterojunction bipolar transistors is modeled numerically and good agreement is found with experimental measurements, Peak experimental values of f(t) = 14 GHz, f(Max) = 22 GHz, beta = 170 and U = 38 dB are obtained near a collector current density of 10(4) A/cm(2) for a nonoptimized device.

引用

页码：1466 / 1467

页数：2

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