SYMMETRICAL P-N-P INALAS INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED WITH SI-ION IMPLANTATION

We have successfully fabricated symmetric P-n-P InAlAs/InGaAs double-heterojunction bipolar transistors (DHBT's) using self-aligned Si-ion implantation and refractory emitter contacts with current gains of 115 and 30 in the emitter-up and the emitter-down configurations, respectively. Two thin Be-doped In0.53Ga0.47As layers inserted on both sides of base lead to the excellent I-V characteristics. We have shown that hole injection from the external portions of the emitter is expected to be suppressed by a factor of 10(-5) to 10(-3) at a collector current density of about 10(3) A/cm2, which is much smaller than that of N-p-n GaAs/AlGaAs HBT's, and our DHBT's are promising devices for application to circuits with low power dissipation.