Suppression of short channel effect in organic thin film transistors

被引：46

作者：

Tsukagoshi, K. ^{[1
]}

Fujimori, F.

Minari, T.

Miyadera, T.

Hamano, T.

Aoyagi, Y.

机构：

[1] RIKEN, Wako, Saitama 3510198, Japan

[2] JST, CREST, Kawaguchi, Saitama 3320012, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 11期

关键词：

D O I：

10.1063/1.2785118

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Short-channel effect in organic thin film transistors with top-contact configuration is effectively suppressed to enhance the performance. The space charge limited current, which prevents the appearance of output saturation behavior, is sufficiently suppressed by reducing the thickness of both the pentacene film and the gate insulator. Molecular doping of the pentacene thin film in the contact reduces the contact resistance and allows a greater increase in field-effect mobility with decreasing channel length. These structural optimizations realize a submicrometer-channel transistor with clear saturation characteristics and low-voltage operation.

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页数：3

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