Growth rate dependent trap density in polythiophene-fullerene solar cells and its implications

被引：43

作者：

Nalwa, Kanwar S. ^{[1
]}

Mahadevapuram, Rakesh C. ^{[2
]}

Chaudhary, Sumit ^{[1
,2
]}

机构：

[1] Iowa State Univ, Dept Elect & Comp Engn, Ames, IA 50011 USA

[2] Iowa State Univ, Dept Mat Sci & Engn, Ames, IA 50011 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 09期

关键词：

OPEN-CIRCUIT VOLTAGE; EFFICIENCY; POLY(3-HEXYLTHIOPHENE); TRANSPORT;

D O I：

10.1063/1.3560483

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To understand the effect of processing conditions such as spin coating speed and drying rate on the density of defects; poly(3-hexylthiophene): fullerene-derivative solar cells A, B, and C were fabricated with solvent drying times of similar to 40 min, 7 min, and 1 min, respectively. We show that slowest grown device A has one order of magnitude less subband gap traps than device C. The open circuit voltage and its light intensity dependence was strongly affected by interfacial recombination of carriers at subgap defect states. The losses due to trap-assisted recombination can even dominate over bimolecular recombination, depending on the density of defect states (C) 2011 American Institute of Physics. [doi:10.1063/1.3560483]

引用

页数：3

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