Solution-Processed Dioctylbenzothienobenzothiophene-Based Top-Gate Organic Transistors with High Mobility, Low Threshold Voltage, and High Electrical Stability

被引：55

作者：

Endo, Toshiyuki ^{[1
]}

Nagase, Takashi ^{[1
,2
]}

Kobayashi, Takashi ^{[1
,2
]}

Takimiya, Kazuo ^{[3
]}

Ikeda, Masaaki ^{[4
,5
]}

Naito, Hiroyoshi ^{[1
,2
]}

机构：

[1] Osaka Prefecture Univ, Dept Phys & Elect, Sakai, Osaka 5998531, Japan

[2] Osaka Prefecture Univ, Res Inst Mol Elect Devices, Sakai, Osaka 5998531, Japan

[3] Hiroshima Univ, Fac Engn, Dept Appl Chem, Hiroshima 7398527, Japan

[4] Nippon Kayaku Co Ltd, Funct Chem R&D Labs, Kita Ku, Tokyo 1158588, Japan

[5] Kyushu Univ, Ctr Organ Photon & Elect Res, Fukuoka 8190395, Japan

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 12期

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; HIGH-PERFORMANCE; BIAS STRESS; DIELECTRICS; INSULATORS;

D O I：

10.1143/APEX.3.121601

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dioctylbenzothieno[2,3-b]benzothiophene (C-8-BTBT)-based organic field-effect transistors (OFETs) with a top-gate configuration, having fluoropolymer gate insulators, are fabricated by means of a spin-coating technique. The device fabrication is simple, and it enables us to obtain C-8-BTBT FETs having high field-effect mobility (mu(FET)), low threshold voltage (V-th), and high electrical stability. We fabricate 116 top-gate C-8-BTBT FETs having mu(FET) of 1: 59 +/- 0: 40 cm(2) V-1 s(-1) and Vth of -1: 48 +/- 3: 02 V, and the maximum mu(FET) is approximately 3 cm(2) cm(2) V-1 s(-1). No changes in the devices characteristics are observed after applying a negative gate bias stress of -1: 2 MV/cm for 10(4) s. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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