Low-Temperature Processable Organic-Inorganic Hybrid Gate Dielectrics for Solution-Based Organic Field-Effect Transistors

被引：38

作者：

Nagase, Takashi ^{[1
,2
]}

Hamada, Takashi ^{[1
]}

Tomatsu, Kenji ^{[1
]}

Yamazaki, Saori ^{[1
]}

Kobayashi, Takashi ^{[1
,2
]}

Murakami, Shuichi ^{[3
]}

Matsukawa, Kimihiro ^{[4
]}

Naito, Hiroyoshi ^{[1
,2
]}

机构：

[1] Osaka Prefecture Univ, Dept Phys & Elect, Naka Ku, Sakai, Osaka 5998531, Japan

[2] Osaka Prefecture Univ, Res Inst Mol Elect Devices, Naka Ku, Sakai, Osaka 5998531, Japan

[3] Technol Res Inst Osaka Prefecture, Izumi Ku, Osaka 5941157, Japan

[4] Osaka Municipal Tech Res Inst, Joto Ku, Osaka 5368533, Japan

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 42期

基金：

日本科学技术振兴机构; 日本学术振兴会;

关键词：

THIN-FILM TRANSISTORS; HIGH-PERFORMANCE; BEHAVIOR; INSULATORS;

D O I：

10.1002/adma.201001871

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Organic-inorganic hybrid poly(methyl silsesquioxane) with a low curing temperature of 150 degrees C synthesized by a sol-gel method is employed as a gate dielectric for solution-based organic field-effect transistors. The device exhibits mobility enhancement, compared with those with SiO2 dielectrics, and hysteresis-free, highly stable operation, which is attributed to extremely low concentration of silanol groups of the poly(methyl silsesquioxane) dielectric.

引用

页码：4706 / +

页数：6

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