Low frequency noise and reliability properties of 0.12μm CMOS devices with Ta2O5 as gate dielectrics

The continuous scaling down of CMOS devices requires gate oxide thinning below 2nm, giving rise to enhanced gate leakage. In order to attenuate this gate current, replacement gate dielectrics have to be employed. Recently, CMOS technologies with Ta2O5 as gate dielectrics have been proposed as possible alternatives. In this work, we investigate the electrical properties of 0.12 mum Ta2O5 CMOS devices in terms of static characteristics, interface quality through low frequency noise, hot carrier degradation and dielectric reliability. (C) 2001 Elsevier Science Ltd. All rights reserved.