The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition

被引：191

作者：

Liu, Han

Xu, Kun

Zhang, Xujie

Ye, Peide D. ^{[1
]}

机构：

[1] Sch Elect & Comp Engn, W Lafayette, IN 47906 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 15期

基金：

美国国家科学基金会;

关键词：

STORAGE; MOSFET;

D O I：

10.1063/1.3703595

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the integration of Al2O3 high-k dielectric on two-dimensional (2D) crystals of boron nitride (BN) and molybdenum disulfide (MoS2) by atomic layer deposition (ALD). We demonstrate the feasibility of direct ALD growth with trimethylaluminum and water as precursors on both 2D crystals. Through theoretical and experimental studies, we found that the initial ALD cycles play the critical role, during which physical adsorption dominates precursor adsorption at the crystal surface. We model the initial ALD growth stages at the 2D surface by analyzing Lennard-Jones potentials, which could guide future optimization of the ALD process on 2D crystals. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3703595]

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页数：4

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