MoS2 Dual-Gate MOSFET With Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric

被引：382

作者：

Liu, Han ^{[1
,2
]}

Ye, Peide D. ^{[1
,2
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 04期

基金：

美国国家科学基金会;

关键词：

Atomic layer deposition; MOSFET; MoS2;

D O I：

10.1109/LED.2012.2184520

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on 2-D layer-structured molybdenum disulfide (MoS2) crystals and MoS2 dual-gate n-channel MOSFETs with ALD Al2O3 as the gate dielectric. Our C-V study of MOSFET structures shows good interface between 2-D MoS2 crystal and ALD Al2O3. Maximum drain currents using back gates and top gates are measured to be 7.07 and 6.42 mA/mm, respectively, at V-ds = 2 V with a channel width of 3 mu m, a channel length of 9 mu m, and a top-gate length of 3 mu m. We achieve the highest field-effect mobility of electrons using back-gate control to be 517 cm(2)/V.s. The highest current on/off ratio is over 10(8).

引用

页码：546 / 548

页数：3

共 16 条

[1] Nanosize semiconductors for photooxidation [J].

Abrams, BL ;

Wilcoxon, JP .

CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 2005, 30 (03) :153-182

[2] Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics [J].

Buckley, J ;

De Salvo, B ;

Deleruyelle, D ;

Gely, M ;

Nicotra, G ;

Lombardo, S ;

Damlencourt, JF ;

Hollinger, P ;

Martin, F ;

Deleonibus, S .

MICROELECTRONIC ENGINEERING, 2005, 80 :210-213

[3] Graphene nano-ribbon electronics [J].

Chen, Zhihong ;

Lin, Yu-Ming ;

Rooks, Michael J. ;

Avouris, Phaedon .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2007, 40 (02) :228-232

[4] Nanometre-scale electronics with III-V compound semiconductors [J].

del Alamo, Jesus A. .

NATURE, 2011, 479 (7373) :317-323

[5] Energy band-gap engineering of graphene nanoribbons [J].

Han, Melinda Y. ;

Oezyilmaz, Barbaros ;

Zhang, Yuanbo ;

Kim, Philip .

PHYSICAL REVIEW LETTERS, 2007, 98 (20)

[6] Fabrication of a Freestanding Boron Nitride Single Layer and Its Defect Assignments [J].

Jin, Chuanhong ;

Lin, Fang ;

Suenaga, Kazu ;

Iijima, Sumio .

PHYSICAL REVIEW LETTERS, 2009, 102 (19)

[7]

Liu H., 2011, APPL PHYS LETT, V99, P052108

[8] Atomically Thin MoS2: A New Direct-Gap Semiconductor [J].

Mak, Kin Fai ;

Lee, Changgu ;

Hone, James ;

Shan, Jie ;

Heinz, Tony F. .

PHYSICAL REVIEW LETTERS, 2010, 105 (13)

[9] Two-dimensional atomic crystals [J].

Novoselov, KS ;

Jiang, D ;

Schedin, F ;

Booth, TJ ;

Khotkevich, VV ;

Morozov, SV ;

Geim, AK .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2005, 102 (30) :10451-10453

[10] Single-layer MoS2 transistors [J].

Radisavljevic, B. ;

Radenovic, A. ;

Brivio, J. ;

Giacometti, V. ;

Kis, A. .

NATURE NANOTECHNOLOGY, 2011, 6 (03) :147-150

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