Fabrication of a Freestanding Boron Nitride Single Layer and Its Defect Assignments

被引：1003

作者：

Jin, Chuanhong ^{[1
,2
]}

Lin, Fang ^{[3
]}

Suenaga, Kazu ^{[1
]}

Iijima, Sumio ^{[1
,2
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Nanotube Res Ctr, Tsukuba, Ibaraki 3058565, Japan

[2] Meijo Univ, Dept Mat Sci & Engn, Tenpaku Ku, Nagoya, Aichi 4688502, Japan

[3] S China Agr Univ, Coll Sci, Guangzhou 510642, Guangdong, Peoples R China

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 102卷 / 19期

基金：

美国国家科学基金会;

关键词：

CARBON NANOTUBES; NANORIBBONS; RESOLUTION; CRYSTALS;

D O I：

10.1103/PhysRevLett.102.195505

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A freestanding single layer of hexagonal boron nitride (h-BN) has been successfully fabricated by controlled energetic electron irradiation through a layer-by-layer sputtering process. We have successfully resolved atomic defects in h-BN with triangle shapes by means of an aberration corrected high-resolution transmission electron microscopy with exit-wave reconstruction. Boron monovacancies are found to be preferably formed and the dominating zigzag-type edges are proved to be nitrogen terminated.

引用

页数：4

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