Colossal electro-resistance memory effect at metal/La2CuO4 interfaces

被引：27

作者：

Sawa, A

Fujii, T

Kawasaki, M

Tokura, Y

机构：

[1] JST, CREST, Kawaguchi, Saitama 3220012, Japan

[2] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan

[3] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 37-41期

关键词：

transition-metal oxides; electro-resistance; non-volatile memory; interface; Schottky;

D O I：

10.1143/JJAP.44.L1241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have examined the colossal electro-resistance memory effect for the metal/La2CuO4 (M/LCO) junctions with M = Au, Ti, and Al. Among the junctions, the Ti and Al/LCO junctions exhibited hysteretic and nonlinear Schottky-like current-voltage characteristics, whose resistance could also be switched by pulsed voltage stresses. The resistance switching properties are similar to those previously reported in a Ti/Pr0.7Ca0.3MnO3 junctions, and can be attributed to the charging effect at the Schottky-like interface.

引用

收藏

页码：L1241 / L1243

页数：3

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