Minimizing inductive noise in system-on-a-chip with multiple power Gating structures

被引:26
作者
Kim, S [1 ]
Kosonocky, SV [1 ]
Knebel, DR [1 ]
Stawiasz, K [1 ]
Heidel, D [1 ]
Immediato, M [1 ]
机构
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源
ESSCIRC 2003: PROCEEDINGS OF THE 29TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE | 2003年
关键词
D O I
10.1109/ESSCIRC.2003.1257215
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A multiple power domain strategy in which each power domain has an independent power gating structure is an effective means for reducing leakage power consumption in a system-on-a-chip. During an individual power gating structure power-mode transition, however, serious inductive noise is introduced that may affect normal operation of neighboring circuits. We present a novel power gating structure in which inductive noise is reduced through gradual turn-on and turn-off of its sleep transistor. Experimental simulation results with PowerSpice fixtured in different package models demonstrate the effectiveness of the proposed power gate switching noise reduction technique.
引用
收藏
页码:635 / 638
页数:4
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