Temperature distribution and transport mode in a close-spaced vapor transport reactor for CuInSe2 depositions

The present work is an improvement of a close-spaced vapor transport method to deposit CuInSe2 thin films in a closed vertical reactor. The study concerns two points: (i) the determination of the actual source (T-s) and substrate (T-d) temperatures from experimental values measured in accessible points. For that, the equivalent thermal circuit of the reactor was established, and the equations were written to deduce T, and Td. (ii) The determination of the process governing the mass transfer, from experimental values of the deposition rate measured as a function of T, and Td. In our experimental conditions, the transport is limited by the reaction kinetics, not by the diffusion. (C) 1998 American Institute of Physics.